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| SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF Band Radio. KDV240 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G FEATURES High Capacitance Ratio : C1V/C4V =2.1(Typ.) Low Series Resistance : rs=0.28 Useful for Small Size Tuner. (Typ.) K A H E 2 D J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 10 150 -55 150 UNIT V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 1. ANODE 2. CATHODE USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C1V C4V K rS IR=1 A VR=10V VR=1V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz VR=1V, f=470MHz TEST CONDITION MIN. 10 9.7 4.45 1.8 TYP. 2.1 0.28 MAX. 3 11.1 5.45 0.4 UNIT V nA pF Marking Type Name EC 2003. 1. 27 Revision No : 0 F L 1/2 KDV240 C T - VR 100 CAPACITANCE CT (pF) 50 30 SERIES RESISTANCE r s () f=1MHz Ta=25 C r s - VR 0.4 f=470MHz Ta=25 C 0.3 10 5 3 0.2 0.1 1 0 1 2 3 4 5 6 0 0.1 0.3 0.5 1 3 5 10 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2003. 1. 27 Revision No : 0 2/2 |
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